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10r106ppa020sb01m934a datasheet copyright vincotech 1 17 jul. 2015 / revision 1 parameter symbol value unit drainsource voltage v ds 600 v i d = 9,3 v dd = 50 i d = 9,3 v dd = 50 t p limited by t jmax pav = ear*f mosfet dv/dt ruggedness d v /d t v ds = 0480v 50 v/ns gatesource voltage v gs 20 v reverse diode dv/dt d v /d t 15 v/ns maximum junction temperature t jmax 150 c condition drain current i d t j = t jmax t h =80c 23 a avalanche energy, single pulse e as 1135 mj peak drain current i dpulse t p limited by t jmax 159 a avalanche energy, repetitive e ar 1,7 mj avalanche current, repetitive i ar 9,3 a total power dissipation p tot t j = t jmax t h =80c 90 w pfc mosfet maximum ratings flow 90pim 1 + pfc 600 v / 20 a clip in pcb mounting trench fieldstop igbt's for low saturation losses latest generation superjunction mosfet for pfc industrial drives embedded drives 10r106ppa020sb01m934a flow 90 housing schematic features target applications types
10r106ppa020sb01m934a datasheet copyright vincotech 2 17 jul. 2015 / revision 1 t j = parameter symbol value unit t sc t j 150c 6 s v cc v ge = 15v 360 v maximum junction temperature t jmax 175 c 20 v short circuit ratings total power dissipation p tot t j = t j max t s = 80 c 53 w gateemitter voltage v ges repetitive peak collector current i crm t p limited by t j max 60 a a condition collectoremitter voltage v ces 600 v collector current i c t j = t j max t s = 80 c 24 parameter symbol value unit maximum junction temperature t jmax 150 c total power dissipation p tot t j = t jmax t h = 80c 39 w surge (nonrepetitive) forward current i fsm 50 hz single half sine wave 87 a repetitive peak forward current i frm 99 a continuous (direct) forward current i f t j = t jmax t h = 80c 25 a conditions peak repetitive reverse voltage v rrm 600 v pfc diode inverter switch parameter symbol value unit conditions peak repetitive reverse voltage v rrm 600 v repetitive peak forward current i frm 90 a continuous (direct) forward current i f t j = t jmax t h = 80c 32 a total power dissipation p tot t j = t jmax t h =80c 53 w maximum junction temperature t jmax 175 c inverter diode
10r106ppa020sb01m934a datasheet copyright vincotech 3 17 jul. 2015 / revision 1 parameter symbol unit thermal properties isolation properties isolation voltage v i sol dc voltage t p =2s 4000 v creepage distance min 12,7 mm clearance 11,84 mm comparative tracking index cti >200 conditions value c c storage temperature t stg 40+125 operation junction temperature t jop 40+( t jmax 25) rectifier diode module properties dc link capacitor parameter symbol value unit maximum junction temperature t jmax 150 c total power dissipation p tot t j = t jmax t h = 80c 43 w surge current capability i 2 t t p = 10 ms 200 a 2 s surge (nonrepetitive) forward current i fsm 50 hz single half sine wave t j = 150c 200 a continuous (direct) forward current i f t j = t jmax t h = 80c 33 a conditions peak repetitive reverse voltage v rrm 1600 v parameter symbol unit conditions value maximum dc voltage v max 630 v
10r106ppa020sb01m934a datasheet copyright vincotech 4 17 jul. 2015 / revision 1 parameter symbol unit v gs [v] v ds [v] i d [a] t j [ c] min typ max static 25 71 80 125 151 25 2,5 3 3,5 125 25 100 125 25 5 125 thermal thermal resistanc e junction to sink r th(j-s) phasechange material ? =3,4w/mk 0,8 k/w conditions value drainsource onstate resistance r ds(on) 10 25 m v gate to sourc e leakage current i gss 20 0 na gatesource threshold voltage v gs(th) v gs = v ds 0,00172 a internal gate resistance r g 0,85 ? zero gate voltage drain current i dss 0 600 shortc irc uit output capacitance nc gate to source charge q gs 21 gate c harge q g 0/10 480 25,8 gate to drain c harge q gd reverse transfer c apac itanc e 87 shortc irc uit input capacitance c iss f=1mhz 0 100 25 25 170 c rss 35 c oss 215 3800 pf characteristic values pfc mosfet 25 23 125 21 25 4 125 3 25 253 125 327 25 85 125 61 qrrfwd=0,1uc 25 0,084 qrrfwd=0,1uc 125 0,040 25 0,037 125 0,019 mosfet switching ns rise time t r rgon=4 turnoff delay time t d(off) fall time t f turnon delay time t d(on) rgoff=4 15 400 3 turnon energy (per pulse) e on mws turnoff energy (per pulse) e off
10r106ppa020sb01m934a datasheet copyright vincotech 5 17 jul. 2015 / revision 1 25 1,40 1,7 125 1,55 150 25 4,8 150 24 1,82 k/w thermal resistance junc tion to sink r th(j-s) phasechange material ? =3,4w/mk thermal v reverse leakage current i r 600 a forward voltage v f 24 t j [c] min typ max static i f [a] parameter symbol conditions value unit v r [v] pfc diode di/dt=1792a/s 25 9 di/dt=1540a/s 125 8 di/dt=1792a/s 25 11 di/dt=1540a/s 125 12 di/dt=1792a/s 25 0,092 di/dt=1540a/s 125 0,079 di/dt=1792a/s 25 0,013 di/dt=1540a/s 125 0,011 di/dt=1792a/s 25 2688 di/dt=1540a/s 125 1876 q r c reverse rec overed energy e rec mws peak rate of fall of rec overy c urrent (d i rf /d t ) max a/s peak rec overy current i rrm 15 400 3 a reverse rec overy time t rr ns rec overed c harge fwd switching
10r106ppa020sb01m934a datasheet copyright vincotech 6 17 jul. 2015 / revision 1 t j = 25 5 5,8 6,5 125 25 1,1 1,52 1,9 125 150 1,84 25 1,1 125 25 300 125 1,81 k/w thermal thermal resistanc e junction to sink r th(j-s) phasechange material ? =3,4w/mk 20 25 120 nc reverse transfer c apac itanc e c res 32 gate c harge q g 15 480 25 1100 pf output capacitance c oes 71 none input capacitance c ies f=1 mhz 0 25 internal gate resistance r g a gateemitter leakage current i ges 20 0 na collec toremitter cutoff c urrent i ces 0 600 static v ge [v] v ce [v] i c [a] v collec toremitter saturation voltage v cesat 15 20 v gateemitter threshold voltage v ge (th) v ge = v ce 0,00029 parameter symbol conditions value unit t j [ c] min typ max inverter switch 25 66 125 65 25 20 125 21 25 142 125 167 25 76 125 86 q rfwd = 0,9 c 25 0,450 q rfwd = 1,8 c 125 0,667 25 0,385 125 0,523 mws turnoff energy (per pulse) e off 15 ns 400 igbt switching t d(off) fall time t f turnon energy (per pulse) e on rise time t r r gon = 16 turnoff delay time turnon delay time t d(on) r goff = 16 15
10r106ppa020sb01m934a datasheet copyright vincotech 7 17 jul. 2015 / revision 1 25 1,65 1,95 125 1,62 150 25 200 150 i f [a] parameter symbol conditions value unit v r [v] static t j [c] min typ max 30 v reverse leakage current i r 600 a forward voltage v f thermal thermal resistanc e junction to sink r th(j-s) phasechange material ? =3,4w/mk k/w 1,80 inverter diode 25 10 125 14 25 174 125 233 d i /d t = 731 a/s 25 0,883 d i /d t = 708 a/s 125 1,790 25 0,236 125 0,474 25 36 125 85 q r c reverse recovered energy e rec mws peak rate of fall of recovery current (d i rf /d t ) max a/s fwd switching peak recovery current i rrm 15 400 15 a reverse recovery time t rr ns recovered charge 25 1,22 1,9 125 1,21 25 50 150 1100 1,61 k/w thermal resistanc e junction to sink r th(j-s) phasechange material ? =3,4w /mk thermal v reverse leakage current i r 1600 a forward voltage v f 25 t j [c] min typ max static i f [a] parameter symbol conditions value unit v r [v] rectifier diode
10r106ppa020sb01m934a datasheet copyright vincotech 8 17 jul. 2015 / revision 1 parameter symbol unit v ge [v] v ce [v] i c [a] t j [ c] min typ max f vincotech ntc reference power dissipation constant power dissipation p bvalue b (25/100) bvalue b (25/50) k 25 3,5 mw/k 25 3884 25 3964 k 25 21,5 k +4,5 % 210 100 4,5 25 mw rated resistance r deviation of r100 r/r r100=1486 conditions value thermistor dc link capacitor parameter symbol conditions value unit t j [c] min typ max capacitance c nf 100
10r106ppa020sb01m934a datasheet copyright vincotech 9 17 jul. 2015 / revision 1 inverter switch characteristics typical output characteristics igbt typical output characteristics igbt i c = f( v ce ) i c = f( v ce ) t p = 250 s 25 c t p = 250 s v ge = 15 v t tt t j jj j : :: : 125 c t j = 150 c 150 c v ge from 7 v to 17 v in steps of 1 v typical transfer characteristics igbt transient thermal impedance as function of puls e duration igbt i c = f( v ge ) z th(j-s) = f( t p ) t p = 100 s 25 c d = t p / t v ce = 10 v t tt t j jj j : :: : 125 c r th(j-s) = 1,81 k/w 150 c r th (k/w) (s) 6,63e02 3,68e+00 1,83e01 4,61e01 8,24e01 8,38e02 3,93e01 1,82e02 1,96e01 3,57e03 1,49e01 3,52e04 igbt thermal model values 0 5 10 15 20 0 2 4 6 8 10 12 i i i i c cc c (a) (a) (a) (a) v vv v g e g e g e g e (v) (v)(v) (v) 0 15 30 45 60 0 1 2 3 4 5 i i i i c c c c (a) v vv v c e c ec e c e (v) 0 15 30 45 60 0 1 2 3 4 5 i i i i c cc c (a) v vv v c e c ec e c e (v) 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 z z z z t h( j t h( j t h( j t h( j - -- - s) s) s) s) (k/w) t tt t p pp p (s) 10 4 10 3 10 2 10 1 10 0 10 1 10 2 10 1 10 0 10 1
10r106ppa020sb01m934a datasheet copyright vincotech 10 17 jul. 2015 / revision 1 inverter switch characteristics gate voltage vs gate charge igbt v ge = f( q g ) at i c = 20 a 120v 480v 0 2,5 5 7,5 10 12,5 15 17,5 20 0 20 40 60 80 100 120 140 160 v v v v g e g e g e g e (v) q qq q g gg g (nc) short circuit duration as a function of v ge igbt typical short circuit current as a function of v ge igbt t psc = f( v ge ) i sc = f(v ge ) at at v ce = 600 v v ce 600 v t j 175 oc t j 175 oc 0 2 4 6 8 10 12 14 10 11 12 13 14 15 t t t t ps c ps c ps c ps c (s) v vv v g e g eg e g e (v) 0 50 100 150 200 250 300 350 12 13 14 15 16 17 18 19 20 i i i i sc sc sc sc (a) v vv v g e g e g e g e (v)
10r106ppa020sb01m934a datasheet copyright vincotech 11 17 jul. 2015 / revision 1 inverter diode characteristics typical forward characteristics fwd transient thermal impedance as a function of pulse width fwd i f = f( v f ) z th(j-s) = f( t p ) t p = 250 s 25 c t j : 125 c d = t p / t 150 c r th(j-s) = 1,80 k/w fwd thermal model values r (k/w) (s) 7,95e-02 3,72e+00 2,06e-01 4,02e-01 7,04e-01 8,35e-02 4,39e-01 1,56e-02 2,12e-01 2,93e-03 1,68e-01 3,31e-04 0 15 30 45 60 75 90 0 1 2 3 4 5 i f (a) v f (v) z z z z t h( j t h( j t h( j t h( j - -- - s) s) s) s) (k/w) t tt t p pp p (s) d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10 5 10 4 10 3 10 2 10 1 10 0 10 1 10 2 10 1 10 0 10 1
10r106ppa020sb01m934a datasheet copyright vincotech 12 17 jul. 2015 / revision 1 pfc switch characteristics typical output characteristics mosfet typical output characteristics mosfet i d = f( v ds ) i d = f( v ds ) t p = 250 s 25 c t p = 250 s v gs = 10 v t j : 125 c t j = 25oc c 150 c v gs from 0 v to 20 v in steps of 2 v typical transfer characteristics mosfet transient thermal impedance as a function of pulse width mosfet i d = f( v ds ) z thjh = f( t p ) t p = 100 s 25 c d = t p / t v ds = 0 v t j : 125 c r thjh = 0,78 k/w 150 c r (k/w) tau (s) 2,79e02 1,48e+01 9,18e02 1,22e+00 4,16e01 2,24e01 1,49e01 5,85e02 6,36e02 1,29e02 3,14e02 1,19e03 0 5 10 15 20 25 0 1 2 3 4 5 6 i d (a) v gs (v) 0 10 20 30 40 50 60 0 2 4 6 8 10 i d (a) v gs (v) 0 10 20 30 40 50 60 0 1 2 3 4 5 6 7 8 9 10 i d (a) v gs (v) 0,01 0,1 1 1,00e-04 1,00e-03 1,00e-02 1,00e-01 1,00e+00 1,00e+01 1,0 0e+02 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 t p (s) z thjh (k/w)
10r106ppa020sb01m934a datasheet copyright vincotech 13 17 jul. 2015 / revision 1 pfc switch characteristics gate voltage vs gate charge mosfet v gs = f( q g ) at i c = 25 a 0 1 2 3 4 5 6 7 8 9 10 0 50 100 150 200 u gs (v) qg (nc) 120v 480v pfc diode characteristics typical forward characteristics fwd transient thermal impedance as a function of pulse width fwd i f = f( v f ) z th(j-s) = f( t p ) t p = 250 s 25 c d = t p / t t j : 125 c r th(j-s) = 1,82 k/w 150 c fwd thermal model values r (k/w) (s) 8,90e-02 3,09e+00 4,63e-01 3,43e-01 8,81e-01 8,40e-02 2,39e-01 1,66e-02 1,44e-01 2,77e-03 7,55e-02 3,37e-04 0 4 8 12 16 20 24 0 1 2 3 4 5 i f (a) v f (v) z z z z t h( j t h( j t h( j t h( j - -- - s) s) s) s) (k/w) t tt t p pp p (s) d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10 4 10 3 10 2 10 1 10 0 10 1 10 2 10 2 10 1 10 0 10 1
10r106ppa020sb01m934a datasheet copyright vincotech 14 17 jul. 2015 / revision 1 thermistor typical temperature characteristic typical ntc characteristic as a function of temperature r t = f( t ) 0 5000 10000 15000 20000 25000 25 50 75 100 125 r () t (c) ntc-typical temperature characteristic thermistor characteristics rectifier diode characteristics typical forward characteristics rectifier diode transient thermal impedance as a function of pulse width rectifier diode i f = f( v f ) z th(j-s) = f( t p ) t p = 250 s 25 c d = t p / t t j : 125 c r th(j-s) = 1,61 k/w 150 c diode thermal model values r (k/w) (s) 6,72e-02 2,72e+00 1,48e-01 4,14e-01 8,68e-01 8,33e-02 2,53e-01 2,89e-02 1,69e-01 5,15e-03 1,06e-01 9,10e-04 0 15 30 45 60 75 0 0,5 1 1,5 2 2,5 3 i f (a) v f (v) z z z z t h(j t h(j t h(j t h(j - -- - s) s) s) s) (k/w) t tt t p pp p (s) d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10 4 10 3 10 2 10 1 10 0 10 1 10 2 10 2 10 1 10 0 10 1
10r106ppa020sb01m934a datasheet copyright vincotech 15 17 jul. 2015 / revision 1 inverter switching characteristics figure 1. igbt figure 2. igbt typical swit ching energy losses as a f unct ion of co llect or current typical switching energy losses as a f unct ion of ga t e resist or e = f( i c ) e = f( r g ) with an inductive load at 25 c with an inductive load at 25 c v ce = 400 v t j : 125 c v ce = 400 v t j : 125 c v ge = 15 v 150 c v ge = 15 v 150 c r gon = 16 i c = 15 a r goff = 16 figure 3. fwd figure 4. fwd typical reverse recovered energy loss as a f unct ion of collect or current typical reverse recovered energy loss as a f unct ion of gat e resist or e rec = f( i c ) e rec = f( r g ) with an inductive load at 25 c with an inductive load at 25 c v ce = 400 v t j : 125 c v ce = 400 v t j : 125 c v ge = 15 v 150 c v ge = 15 v 150 c r gon = 16 i c = 15 a e rec e rec 0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0 5 10 15 20 25 30 e e e e (mws) (mws) (mws) (mws) i ii i c c c c (a) (a)(a) (a) e rec e rec 0 0,1 0,2 0,3 0,4 0,5 0,6 0 10 20 30 40 50 60 70 e e e e (mws) (mws) (mws) (mws) r rr r g g g g ( (( ( ) )) ) e ee e o n o n o n o n e on e ee e o ff o ff o ff o ff e off 0 0,4 0,8 1,2 1,6 0 5 10 15 20 25 30 e e e e (mws) (mws) (mws) (mws) i ii i c c c c (a) (a)(a) (a) e off e on e o n o n o n o n e o ff o ffo ff o ff 0 0,4 0,8 1,2 1,6 0 10 20 30 40 50 60 70 e e e e (mws) (mws) (mws) (mws) r rr r g g g g ( (( ( ) )) )
10r106ppa020sb01m934a datasheet copyright vincotech 16 17 jul. 2015 / revision 1 inverter switching characteristics figure 5. igbt figure 6. igbt typical swit ching t imes as a f unct ion of collect or current typical switching t imes as a f unct ion of gat e resis t or t = f( i c ) t = f( r g ) with an inductive load at with an inductive load at t j = 125 c t j = 125 c v ce = 400 v v ce = 400 v v ge = 15 v v ge = 15 v r gon = 16 i c = 15 a r goff = 16 figure 7. fwd figure 8. fwd typical reverse recovery t ime as a f unct ion of coll ect or current typical reverse recovery time as a f unct ion of igbt t urn on gat e resist or t rr = f( i c ) t rr = f( r gon ) at v ce = 400 v 25 c at v ce = 400 v 25 c v ge = 15 v t j : 125 c v ge = 15 v t j : 125 c r gon = 16 150 c i c = 15 a 150 c t d(off ) t f t d(on) t r 0,001 0,01 0,1 1 0 5 10 15 20 25 30 t t t t ( (( ( ? s) s) s) s) i ii i c c c c (a (a(a (a ) )) ) t d(off ) t f t d(on) t r 0,001 0,01 0,1 1 0 10 20 30 40 50 60 70 t t t t ( (( ( ? s) s) s) s) r rr r g g g g ( (( ( ) )) ) t rr t rr 0 0,1 0,2 0,3 0,4 0 10 20 30 40 50 60 70 t t t t rr rr rr rr ( (( ( ? s) s) s) s) r rr r g o n g o n g o n g o n ( (( ( ) )) ) t rr t rr 0 0,05 0,1 0,15 0,2 0,25 0,3 0 5 10 15 20 25 30 t t t t rr rr rr rr ( (( ( ? s) s) s) s) i ii i c cc c (a) (a)(a) (a)
10r106ppa020sb01m934a datasheet copyright vincotech 17 17 jul. 2015 / revision 1 inverter switching characteristics figure 9. fwd figure 10. fwd typical recovered charge as a f unct ion of collect or current typical recoved charge as a f unction of igbt turn o n gat e resist or q r = f( i c ) q r = f( r gon ) at at v ce = 400 v 25 c at v ce = 400 v 25 c v ge = 15 v t j : 125 c v ge = 15 v t j : 125 c r gon = 16 150 c i c = 15 a 150 c figure 11. fwd figure 12. fwd typical peak reverse recovery current current as a f unction of collector current typical peak reverse recovery current as a f unct ion of igbt t urn on gat e resistor i rm = f( i c ) i rm = f( r gon ) at v ce = 400 v 25 c at v ce = 400 v 25 c v ge = 15 v t j : 125 c v ge = 15 v t j : 125 c r gon = 16 150 c i c = 15 a 150 c i rm i rm 0 10 20 30 40 50 0 10 20 30 40 50 60 70 i i i i r m r m r m r m (a) (a) (a) (a) r rr r go n go n go n go n ( (( ( ) )) ) q qq q r r r r q r 0 0,5 1 1,5 2 0 10 20 30 40 50 60 70 q q q q r rr r (c) (c) (c) (c) r rr r g on g on g on g on ( (( ( ) )) ) i ii i r m r mr m r m i rm 0 4 8 12 16 0 5 10 15 20 25 30 i i i i r m r m r m r m (a) (a) (a) (a) i ii i c c c c (a) (a)(a) (a) q r q r 0 0,5 1 1,5 2 2,5 0 5 10 15 20 25 30 q q q q r rr r ( (( ( ? c) c) c) c) i ii i c c c c (a) (a)(a) (a)
10r106ppa020sb01m934a datasheet copyright vincotech 18 17 jul. 2015 / revision 1 inverter switching characteristics figure 13. fwd figure 14. fwd typical rat e of f all of f orward and reverse recover y current as a f unct ion of collect or current typical rat e of f all of f orward and reverse recovery curre nt as a f unct ion of igbt t urn on gate resist or dif/dt,dirr/dt = f( i c ) d i f /d t ,d i rr /dt = f( r g) at v ce = 400 v 25 c at v ce = 400 v v ge = 15 v t j : 125 c v ge = 15 v r gon = 16 150 c i c = 15 a 0 2000 4000 6000 8000 0 10 20 30 40 50 60 70 d dd d i i i i /d /d /d /d t t t t (a/ (a/ (a/ (a/ ? s) s) s) s) r rr r g o n g o n g o n g o n ( (( ( ) )) ) d i ii i f ff f / // / d t tt t d i ii i r r r rr r r r / // / d t tt t 0 300 600 900 1200 0 5 10 15 20 25 30 d dd d i i i i /d /d /d /d t t t t (a/ (a/ (a/ (a/ s) s) s) s) i ii i c c c c (a) (a)(a) (a) d i ii i f ff f / // / d t tt t d i ii i r r r rr r r r / // / d t tt t figure 15. igbt reverse bias saf e operat ing area i c = f( v ce ) at t j = 175 c r gon = 16 r goff = 16 0 10 20 30 40 50 60 70 0 100 200 300 400 500 600 700 i i i i c c c c (a) (a) (a) (a) v vv v c e c e c e c e (v) (v)(v) (v) i ii i c max c maxc max c max v v v v ce ce ce ce max max max max i i i i c cc c module module module module i i i i c cc c chip chip chip chip
10r106ppa020sb01m934a datasheet copyright vincotech 19 17 jul. 2015 / revision 1 t j 125 c r gon 16 r goff 16 figure 1. igbt figure 2. igbt turnof f swit ching wavef orms & def init ion of tdof f , teof f (t eof f = int egrating t ime f or eof f ) turnon s wit ching wavef orms & def init ion of t don, t eon (teon = int egrat ing t ime f or eon) v ge (0%) = 15 v v ge (0%) = 15 v v ge (100%) = 15 v v ge (100%) = 15 v v c (100%) = 400 v v c (100%) = 400 v i c (100%) = 21 a i c (100%) = 21 a t doff = 0,145 s t don = 0,067 s t e off = 0,400 s t e on = 0,245 s figure 3. igbt figure 4. igbt turnof f swit ching wavef orms & def init ion of tf turnon swit ching wavef orms & def init ion of t r v c (100%) = 400 v v c (100%) = 400 v i c (100%) = 21 a i c (100%) = 21 a t f = 0,075 s t r = 0,029 s = general conditions == i c 1% v ce 90% v ge 90% 20 20 60 100 140 0,1 0 0,1 0,2 0,3 0,4 0,5 % t tt t (s) (s)(s) (s) t doff t eoff v ce i c v ge i c 10% v ge 10% t don v ce 3% 50 0 50 100 150 200 2,9 3 3,1 3,2 3,3 3,4 % t tt t ( s) ( s)( s) ( s) i c v ce t eon v ge fitted i c10% i c 90% i c 60% i c 40% 25 0 25 50 75 100 125 0 0,08 0,16 0,24 0,32 % t tt t (s) (s)(s) (s) v ce i c t f i c 10% i c 90% 50 0 50 100 150 200 3 3,08 3,16 3,24 3,32 3,4 % t tt t (s) (s)(s) (s) t r v ce i c inverter switching definition
10r106ppa020sb01m934a datasheet copyright vincotech 20 17 jul. 2015 / revision 1 inverter switching definition figure 5. igbt figure 6. igbt turnof f swit ching wavef orms & def init ion of teof f turnon swit ching wavef orms & def init ion of t eon p off (100%) = 8,37 kw p on (100%) = 8,37 kw e off (100%) = 0,71 mj e on (100%) = 0,96 mj t e off = 0,40 s t e on = 0,24 s figure 7. fwd turnof f swit ching wavef orms & def inition of t rr v d (100%) = 400 v i d (100%) = 21 a i rrm (100%) = 13 a t rr = 0,257 s i c 1% v ge 90% 25 0 25 50 75 100 125 0,1 0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 % t tt t (s) (s)(s) (s) p off e off t eoff v ce 3% v ge 10% 25 0 25 50 75 100 125 150 2,9 3 3,1 3,2 3,3 3,4 % t tt t (s) (s)(s) (s) p on e on t eon i rrm 10% i rrm 90% i rrm 100% t rr 150 100 50 0 50 100 150 3 3,1 3,2 3,3 3,4 3,5 % t tt t (s) (s)(s) (s) i d v d fitted
10r106ppa020sb01m934a datasheet copyright vincotech 21 17 jul. 2015 / revision 1 inverter switching definition figure 8. fwd figure 9. fwd turnon swit ching wavef orms & def inition of t qrr (t qrr = int egrat ing t ime f or q rr ) turnon swit ching wavef orms & def init ion of t erec (t erec = int egrat ing t ime f or e rec ) i d (100%) = 21 a p rec (100%) = 8,37 kw q rr (100%) = 2,01 c e rec (100%) = 0,54 mj t qrr = 0,52 s t erec = 0,52 s t qrr 100 50 0 50 100 150 3 3,1 3,2 3,3 3,4 3,5 3,6 3,7 % t tt t (s) (s)(s) (s) i d q rr 25 0 25 50 75 100 125 3 3,1 3,2 3,3 3,4 3,5 3,6 3,7 % t tt t (s) (s)(s) (s) p rec e rec t erec
10r106ppa020sb01m934a datasheet copyright vincotech 22 17 jul. 2015 / revision 1 pfc switching characteristics figure 1. mosfet figure 2. mosfet typical switching energy losses as a function of dr ain current typical switching energy losses as a function of ga te resistor e = f( i d ) e = f( r g ) with an inductive load at 25 c with an inductive load at 25 c v ds = 400 v t j : 125 c v ds = 400 v t j : 125 c v gs = 15 v 150 c v gs = 15 v 150 c r gon = 4 i d = 3 a r goff = 4 figure 3. fwd figure 4. fwd typical reverse recovery energy loss as a function of drain current typical reverse recovery energy los s as a function of gate resistor e rec = f( i d ) e rec = f( r g ) with an inductive load at 25 c with an inductive load at 25 c v ds = 400 v t j : 125 c v ds = 400 v t j : 125 c v gs = 15 v 150 c v gs = 15 v 150 c r gon = 4 i d = 3 a r goff = 4 t rr q r e rec (d i rf /d t ) max e rec e rec 0 0,005 0,01 0,015 0,02 0,025 0,03 0,035 0 5 10 15 20 25 30 e (mws) i d (a) e rec e rec 0 0,002 0,004 0,006 0,008 0,01 0,012 0,014 0,016 0,018 0,02 0 5 10 15 20 25 30 35 e (mws) r g ( w ww w ) e off e on e on e off 0 0,05 0,1 0,15 0,2 0,25 0 5 10 15 20 25 30 e (mws) i d (a) e off e on e on e off 0 0,05 0,1 0,15 0,2 0,25 0 5 10 15 20 25 30 35 e (mws) r g ( w ww w )
10r106ppa020sb01m934a datasheet copyright vincotech 23 17 jul. 2015 / revision 1 pfc switching characteristics figure 5. mosfet figure 6. mosfet typical switching times as a function of drain curr ent typical switching times as a function of gate resi stor t = f( i d ) t = f( r g ) with an inductive load at with an inductive load at t j = 125 c t j = 125 c v ds = 400 v v ds = 400 v v gs = 15 v v gs = 15 v r gon = 4 i d = 3 a r goff = 4 figure 7. fwd figure 8. fwd typical reverse recovery time as a function of drai n current typical reverse recovery time as a function of mosf et turn on gate resistor t rr = f( i d ) t rr = f( r gon ) at v ds = 400 v 25 c at v ds = 400 v 25 c v gs = 15 v t j : 125 c v gs = 15 v t j : 125 c r gon = 4 150 c i d = 3 a 150 c t doff t f t don t r 0,001 0,01 0,1 1 0 5 10 15 20 25 30 35 t ( s) i d (a) t f t don t r 0,001 0,01 0,1 1 0 5 10 15 20 25 30 35 t ( s) r g ( ) t rr t rr 0 0,01 0,02 0,03 0,04 0,05 0,06 0,07 0 5 10 15 20 25 30 35 t rr ( s) r gon ( ) t rr t rr 0 0,005 0,01 0,015 0,02 0 5 10 15 20 25 30 t rr ( s) i d (a) t doff
10r106ppa020sb01m934a datasheet copyright vincotech 24 17 jul. 2015 / revision 1 pfc switching characteristics figure 9. fwd figure 10. fwd typical reverse recovery charge as a function of dr ain current typical reverse recovery charge as a function of mo sfet turn on gate resistor q rr = f( i d ) q rr = f( r gon ) at at v ds = 400 v 25 c at v ds = 400 v 25 c v gs = 15 v t j : 125 c v gs = 15 v t j : 125 c r gon = 4 150 c i d = 3 a 150 c figure 11. fwd figure 12. fwd typical reverse recovery current as a function of d rain current typical reverse recovery current as a f unction of mosfet turn on gate resistor i rrm = f( i d ) i rrm = f( r gon ) at v ds = 400 v 25 c at v ds = 400 v 25 c v g s = 15 v t j : 125 c v g s = 15 v t j : 125 c r gon = 4 150 c i d = 3 a 150 c i rrm i rrm 0 5 10 15 20 25 0 5 10 15 20 25 30 35 i rrm (a) r gon ( ) q rr q rr 0 0,02 0,04 0,06 0,08 0,1 0,12 0 5 10 15 20 25 30 35 q rr ( c) r gon ( ) i rrm i rrm 0 2 4 6 8 10 12 14 0 5 10 15 20 25 30 i rrm (a) i d (a) q rr q rr 0 0,02 0,04 0,06 0,08 0,1 0,12 0,14 0,16 0 5 10 15 20 25 30 q rr ( c) i d (a)
10r106ppa020sb01m934a datasheet copyright vincotech 25 17 jul. 2015 / revision 1 pfc switching characteristics figure 13. fwd figure 14. fwd typical rat e of f all of f orward and reverse recover y current as a f unct ion of drain current typical rat e of f all of f orward and reverse recover y current as a f unct ion of d i 0 /d t ,d i rec /d t = f( i d ) mosfet t urn on gate resistor at v ds = 400 v 25 c at v ds = 400 v 25 c v gs = 15 v t j : 125 c v gs = 15 v t j : 125 c r gon = 4 150 c i d = 3 a 150 c 0 1000 2000 3000 4000 5000 6000 7000 0 5 10 15 20 25 30 35 di rec / dt (a/ m m m m s) r gon ( ) di 0 /dt di rec /dt 0 500 1000 1500 2000 2500 3000 3500 4000 0 5 10 15 20 25 30 di rec / dt (a/ m m m m s) i d (a) di 0 /dt di rec /dt figure 15. mosfet reverse bias safe operating area i d = f( v ds ) at t j = 175 c r gon = 4 r goff = 4 0 5 10 15 20 25 30 0 100 200 300 400 500 600 700 800 i d (a) v ds (v) i d max v ds max i d module i d chip
10r106ppa020sb01m934a datasheet copyright vincotech 26 17 jul. 2015 / revision 1 pfc switching definition t j 125 c r gon 8 r goff 8 figure 1. mosfet figure 2. mosfet turnoff switching waveforms & definition of t doff , t eoff (t eoff = integrating time for e off ) turnon switching waveforms & definition of t don , t eon (t eon = integrating time for e on ) v gs (0%) = 0 v v gs (0%) = 0 v v gs (100%) = 10 v v gs (100%) = 10 v v ds (100%) = 400 v v ds (100%) = 400 v i d (100%) = 21 a i d (100%) = 21 a t doff = 0,237 s t don = 0,023 s t e off = 0,271 s t e on = 0,082 s figure 3. mosfet figure 4. mosfet turnoff switching waveforms & definition of t f turnon switching waveforms & definition of t r v ds (100%) = 400 v v ds (100%) = 400 v i d (100%) = 21 a i d (100%) = 21 a t f = 0,011 s t r = 0,011 s = general conditions == i d 1% v ds 90% v gs 90% -25 0 25 50 75 100 125 -0,1 -0,02 0,06 0,14 0,22 0,3 % time (us) t doff t eoff v ds i d v gs i d 10% v gs 10% t don v ds 3% -50 0 50 100 150 2,9 2,98 3,06 3,14 3,22 3,3 % time(us) i d v ds t eon v gs fitted i d 10% i d 90% i d 60% i d 40% -25 0 25 50 75 100 125 0,1 0,14 0,18 0,22 0,26 0,3 % time (us) v ds i d t f i d 10% i d 90% -25 0 25 50 75 100 125 150 175 3 3,02 3,04 3,06 3,08 3,1 % time(us) t r v ds i d
10r106ppa020sb01m934a datasheet copyright vincotech 27 17 jul. 2015 / revision 1 pfc switching definition figure 5. mosfet figure 6. mosfet turnoff switching waveforms & definition of t eoff turnon switching waveforms & definition of t eon p off (100%) = 8,40 kw p on (100%) = 8,40 kw e off (100%) = 0,14 mj e on (100%) = 0,23 mj t e off = 0,27 s t e on = 0,08 s figure 7. fwd turnoff switching waveforms & definition of t rr v ds (100%) = 400 v i d (100%) = 21 a i rrm (100%) = 6 a t rr = 0,013 s i d 1% v gs 90% -25 0 25 50 75 100 125 -0,1 -0,02 0,06 0,14 0,22 0,3 % time (us) p off e off t eoff v ds 3% v gs 10% -25 0 25 50 75 100 125 2,95 2,975 3 3,025 3,05 3,075 3,1 % time(us) p on e on t eon i rrm 10% i rrm 90% i rrm 100% t rr -125 -100 -75 -50 -25 0 25 50 75 100 125 3 3,02 3,04 3,06 3,08 3,1 % time(us) i d v ds fitted
10r106ppa020sb01m934a datasheet copyright vincotech 28 17 jul. 2015 / revision 1 pfc switching definition figure 8. fwd figure 9. fwd turnon switching waveforms & definition of t qrr (t qrr = integrating time for q rr ) turnon switching waveforms & definition of t erec (t erec = integrating time for e rec ) i d (100%) = 21 a p rec (100%) = 8,40 kw q rr (100%) = 0,13 c e rec (100%) = 0,03 mj t q rr = 0,10 s t e rec = 0,10 s t qrr -50 0 50 100 150 3 3,03 3,06 3,09 3,12 3,15 % time(us) i d q rr -250 -200 -150 -100 -50 0 50 100 150 3 3,03 3,06 3,09 3,12 3,15 % time(us) p rec e rec t erec
10r106ppa020sb01m934a datasheet copyright vincotech 29 17 jul. 2015 / revision 1 vinco date code name&ver ul lot serial vinco wwyy nnnnnnnvv ul lllll ssss type&ver lot number serial date code tttttttvv lllll ssss wwyy pin x y function 1 53 0 l2 2 46 0 dc+ 3 39,5 0 pfcin 4 32,5 0 pfc+ 5 28,1 0 inv+ 6 18 0 wlg 7 15 0 wl 8 12 0 vlg 9 9 0 vl 10 3 0 ulg 11 0 0 ul 12 0 7 uhg 13 3 7 u 14 8,5 7 vhg 15 11,5 7 v 16 17 7 whg 17 20 7 w 18 33 7 pfc 19 36 7 pfcg 20 39 7 ntc 21 46 7 dc 22 53 7 l1 text pin table [mm] in packaging barcode as ordering code & marking outline m934a 10r106ppa020sb01m934a m934a in datamatrix as ordering code without thermal paste version datamatrix vinco wwyy nnnnnnnvv ul lllll ssss
10r106ppa020sb01m934a datasheet copyright vincotech 30 17 jul. 2015 / revision 1 pinout mosfet!
10r106ppa020sb01m934a datasheet copyright vincotech 31 17 jul. 2015 / revision 1 packaging instruction standard packaging quantity (spq) sample handling instruction 80 >spq standard

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